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1 low-energy ion implantation
імплантація іонів низької енергії, низькоенергетична іонна імплантаціяEnglish-Ukrainian dictionary of microelectronics > low-energy ion implantation
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2 implantation
1) іонна імплантація, іонне легування (див. т-ж implant) 2) рідк. іонно-імплантована область - angled ion implantation
- arsenic ion implantation
- bipolar ion implantation
- blanket ion implantation
- deep ion implantation
- double-ion implantation
- emitter ion implantation
- field-oxide implantation
- field implantation
- high-dosage ion implantation
- high-energy ion implantation
- high-level ion implantation
- hot implantation
- ion-beamimplantation
- ionimplantation
- low-dosage ion implantation
- low-energy ion implantation
- low-level ion implantation
- masked ion implantation
- maskless implantation
- molecular ion implantation
- multiple implantation
- multiple energy ion implantation
- multiple energy implantation
- n-type ion implantation
- oblique-rotating implantation
- post emitter ion implantation
- predep implantation
- p-type ion implantation
- self-aligned ion implantation
- single-ion implantation
- surface-wide ion implantation
- surface-wide implantation
- tilt-angle implantationEnglish-Ukrainian dictionary of microelectronics > implantation
См. также в других словарях:
low-energy ion implantation — mažos energijos jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. low energy ion implantation vok. Implantation von Ionen niedriger Energien, f rus. имплантация ионов низкой энергии, f pranc. implantation d ions de basse… … Radioelektronikos terminų žodynas
Implantation von Ionen niedriger Energien — mažos energijos jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. low energy ion implantation vok. Implantation von Ionen niedriger Energien, f rus. имплантация ионов низкой энергии, f pranc. implantation d ions de basse… … Radioelektronikos terminų žodynas
implantation d'ions de basse énergie — mažos energijos jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. low energy ion implantation vok. Implantation von Ionen niedriger Energien, f rus. имплантация ионов низкой энергии, f pranc. implantation d ions de basse… … Radioelektronikos terminų žodynas
Ion Beam Mixing — is a process for adhering two multilayers, especially a substrate and deposited surface layer. The process involves bombarding layered samples with doses of ion radiation in order to promote mixing at the interface, and generally serves as a… … Wikipedia
Static secondary ion mass spectrometry — Static secondary ion mass spectrometry, or static SIMS is a technique for chemical analysis including elemental composition and chemical structure of the uppermost atomic or molecular layer of a solid which may be a metal, semiconductor or… … Wikipedia
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Deep reactive-ion etching — (DRIE) is a highly anisotropic etch process used to create deep penetration, steep sided holes and trenches in wafers, with aspect ratios of 20:1 or more. It was developed for microelectromechanical systems (MEMS), which require these features,… … Wikipedia
mažos energijos jonų implantavimas — statusas T sritis radioelektronika atitikmenys: angl. low energy ion implantation vok. Implantation von Ionen niedriger Energien, f rus. имплантация ионов низкой энергии, f pranc. implantation d ions de basse énergie, f … Radioelektronikos terminų žodynas
имплантация ионов низкой энергии — mažos energijos jonų implantavimas statusas T sritis radioelektronika atitikmenys: angl. low energy ion implantation vok. Implantation von Ionen niedriger Energien, f rus. имплантация ионов низкой энергии, f pranc. implantation d ions de basse… … Radioelektronikos terminų žodynas
Decaborane — Other names decaborane decaboron tetradecahydride … Wikipedia